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TZID:Europe/Paris
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DTSTART:20171029T030000
TZOFFSETFROM:+0200
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DTSTART:20180325T020000
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UID:calendar.12991.field_data.0@www.u-gov-ricerca.uniroma1.it
DTSTAMP:20260409T073646Z
CREATED:20171219T114539Z
DESCRIPTION:State of the art good quality a-Si:H can be deposited by Pressu
 re Enhanced Chemical Vapor Deposition (PECVD).This technique has reached a
  stable maturity and quality\, due to the large investment directed to mas
 s production of a-Si:H solar cells and thin film transistor for active mat
 rix flat panel displays.The amorphous phase of silicon has been intensivel
 y studied during the last decade of the XX century and it is well known th
 at the electronic and optical properties of the films are strongly influence
 d by deposition technique and conditions. The physical properties of amorp
 hous silicon are reviewed and correlated with the possibility of using thi
 s material in new applicative contexts.Photonic waveguides\, biomedical pr
 oteomic sensor devices\, plasmonic devices\, integration with metal nanopa
 rticles and graphene are presented as a possible reinvention of amorphous 
 silicon for novel optoelectronics applications.
DTSTART;TZID=Europe/Paris:20171220T153000
DTEND;TZID=Europe/Paris:20171220T153000
LAST-MODIFIED:20191008T082902Z
LOCATION:Seminar Room at 2nd floor of DIET\, via Eudossiana\, 18
SUMMARY:Amorphous silicon photonics devices - Prof. Alessandro Fantoni - In
 stituto Politécnico de Lisboa
URL;TYPE=URI:http://www.u-gov-ricerca.uniroma1.it/node/12991
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